Other articles related with "energy band":
107303 Zhiyuan Liu(刘志愿), Ting Yang(杨婷), Yonggui Wang(王永贵), Ailin Xia(夏爱林), and Lianbo Ma(马连波)
  Energy band and charge-carrier engineering in skutterudite thermoelectric materials
    Chin. Phys. B   2022 Vol.31 (10): 107303-107303 [Abstract] (263) [HTML 0 KB] [PDF 7415 KB] (153)
47701 Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威)
  Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
    Chin. Phys. B   2020 Vol.29 (4): 47701-047701 [Abstract] (557) [HTML 1 KB] [PDF 1331 KB] (117)
38504 Xuan-Zhang Li(李炫璋), Ling Sun(孙令), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Chen Yue(岳琛), Li-Li Xie(谢莉莉), Wen-Xin Wang(王文新), Hong Chen(陈弘), Hai-Qiang Jia(贾海强), Lu Wang(王禄)
  A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector
    Chin. Phys. B   2020 Vol.29 (3): 38504-038504 [Abstract] (760) [HTML 1 KB] [PDF 494 KB] (186)
127310 Yang Xie(谢阳), Zhi-Jian Hu(胡智健), Wen-Hao Ding(丁文浩), Xiao-Long Lü(吕小龙), Hang Xie(谢航)
  One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects
    Chin. Phys. B   2017 Vol.26 (12): 127310-127310 [Abstract] (617) [HTML 0 KB] [PDF 6064 KB] (237)
37101 Zahra Nourbakhsh, Aminollah Vaez
  Electronic properties and topological phases of ThXY (X=Pb, Au, Pt and Y= Sb, Bi, Sn) compounds
    Chin. Phys. B   2016 Vol.25 (3): 37101-037101 [Abstract] (664) [HTML 0 KB] [PDF 1046 KB] (366)
27202 Zhang Yu-Ping (张玉萍), Yin Yi-Heng (尹贻恒), Lü Huan-Huan (吕欢欢), Zhang Hui-Yun (张会云)
  Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage
    Chin. Phys. B   2014 Vol.23 (2): 27202-027202 [Abstract] (556) [HTML 1 KB] [PDF 1877 KB] (523)
78101 Liu Xin(刘欣), Huang Dong-Liang(黄东亮), Wu Li-Li(武立立), Zhang Xi-Tian(张喜田), and Zhang Wei-Guang(张伟光)
  Novel photoluminescence properties of InAlO3(ZnO)m superlattice nanowires
    Chin. Phys. B   2011 Vol.20 (7): 78101-078101 [Abstract] (1602) [HTML 0 KB] [PDF 1647 KB] (866)
107105 Jia Ren-Xu(贾仁需), Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门)
  First-principle calculation on the defect energy level of carbon vacancy in 4H–SiC
    Chin. Phys. B   2010 Vol.19 (10): 107105-107105 [Abstract] (1480) [HTML 0 KB] [PDF 410 KB] (865)
812 Wang Li-Min (王立民), Luo Ying (罗莹), Ma Ben-Kun (马本堃), Liu Cheng-Shi (刘承师)
  Electronic structure of hexagonal quantum-disc clusters
    Chin. Phys. B   2002 Vol.11 (8): 812-816 [Abstract] (1094) [HTML 1 KB] [PDF 269 KB] (455)
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